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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 18* i d @ v gs = 12v, t c = 100c continuous drain current 18* i dm pulsed drain current 72 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 110 mj i ar avalanche current 18 a e ar repetitive avalanche energy 7.5 mj dv/dt peak d iode recovery dv/dt 10 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in./1.6mm from case for 10sec) weight 4.3 (t ypical) g pre-irradiation international rectifiers r5 tm technology provides high performance power mosfets for spaceapplications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. c a www.irf.com 1

features: single event effect (see) hardened ultra low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic package light weight

radiation hardened jansr2n7483t3 power mosfet 60v, n-channel thru-hole (to-257aa) ref: mil-prf-19500/702 technology irhy57034cm to-257aa product summary part number radiation level r ds(on) i d qpl part number irhy57034cm 100k rads (si) 0.04 ? 18a* jansr2n7483t3 irhy53034cm 300k rads (si) 0.04 ? 18a* JANSF2N7483T3 irhy54034cm 500k rads (si) 0.04 ? 18a* jansg2n7483t3 irhy58034cm 1000k rads (si) 0.048 ? 18a* jansh2n7483t3 pd-93825e downloaded from: http:///
irhy57034cm, jansr2n7483t3 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 60 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.057 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.04 ? v gs = 12v, i d = 18a resistance v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 16 s v ds 15v, i ds = 18a i dss zero gate voltage drain current 10 v ds = 48v ,v gs = 0v 2 5 v ds = 48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 45 v gs =12v, i d = 18a q gs gate-to-source charge 10 nc v ds = 30v q gd gate-to-drain (miller) charge 15 t d (on) turn-on delay time 25 v dd = 30v, i d = 18a, t r rise time 100 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time 35 t f fall time 30 l s + l d total inductance 6.8 c iss input capacitance 1152 v gs = 0v, v ds = 25v c oss output capacitance 535 p f f = 1.0mhz c rss reverse transfer capacitance 42 na nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 1.67 r thja junction-to-ambient 80 c/w note: corresponding spice and saber models are available on international rectifier web site.

source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 18* i sm pulse source current (body diode) 72 v sd diode forward voltage 1.2 v t j = 25c, i s = 18a, v gs = 0v t rr reverse recovery time 99 ns t j = 25c, i f = 18a, di/dt 100a/ s q rr reverse recovery charge 322 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a

measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) downloaded from: http:///
table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 500k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 60 60 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 10 25 a v ds =48v, v gs =0v r ds(on) static drain-to-source 0.034 0.043 ? v gs = 12v, i d = 18a on-state resistance (to-3) r ds(on) static drain-to-source 0.040 0.048 ? v gs = 12v, i d = 18a on-state resistance (to-257aa) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics 1. part numbers irhy57034cm (jansr2n7483t3) , irhy53034cm (JANSF2N7483T3) and irhy54034cm (jansg2n7483t3 ) 2. part number irhy58034cm (jansh2n7483t3) fig a. typical single event effect, safe operating area v sd diode forward voltage 1.2 1.2 v v gs = 0v, i s = 18a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2.

www.irf.com 3 irhy57034cm, jansr2n7483t3 table 2. typical single event effect safe operating area let ener gy ran g ev d s ( v ) (mev/(mg/cm 2 )) (mev) (m) @vgs = @vgs = @vgs = @vgs = @vgs = 0v -5v -10v -15v -20v 38 5% 300 7.5% 38 7.5% 60 60 60 60 30 61 5% 330 7.5% 31 10% 46 46 35 25 15 84 5% 350 10% 28 7.5% 35 30 25 20 14 0 10 20 30 40 50 60 70 -20 -15 -10 -5 0 bias vgs (v) bias vds (v) let=38 5% let=61 5% let=84 5% downloaded from: http:///
irhy57034cm, jansr2n7483t3 pre-irradiation 4 www.irf.com

15 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 5 7 9 11 13 15 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 22a 18a downloaded from: http:///
www.irf.com 5 pre-irradiation irhy57034cm, jansr2n7483t3

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1 10 100 0 500 1000 1500 2000 2500 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 10 20 30 40 0 5 10 15 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 22a v = 12v ds v = 30v ds v = 48v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 18a 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100 s dc downloaded from: http:///
irhy57034cm, jansr2n7483t3 pre-irradiation 6 www.irf.com $

v ds 90%10% v gs t d(on) t r t d(off) t f $
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0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 5 10 15 20 25 30 35 t , case temperature ( c) i , drain current (a) c d limited by package downloaded from: http:///
www.irf.com 7 pre-irradiation irhy57034cm, jansr2n7483t3 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, !

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t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 50 100 150 200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 8.0a 11.4a 18a downloaded from: http:///
irhy57034cm, jansr2n7483t3 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 0.7 mh peak i l =18a, v gs =12v i sd 18a, di/dt 234a/ s, v dd 60v, t j 150c footnotes: 3.05 [.120] 0.13 [.005] 0.71 [.028] max. b 5.08 [.200] 4.83 [.190] 10.92 [.430] 10.42 [.410] 1.14 [.045] 0.89 [.035] 16.89 [.665] 16.39 [.645] 321 15.88 [.625] 12.70 [.500] 0.88 [.035] 0.64 [.025] ? 0.50 [.020] c a b 2x 3x ? 2.54 [.100] c 10.66 [.420] 10.42 [.410] a 13.63 [.537] 13.39 [.527] 3x ? 3.81 [.150] 3.56 [.140] case outline and dimensions to-257aa not es : 1. dimens ioning & t olerancing pe r ans i y14.5m-1994. 2. cont rolling dimens ion: inch. 3. dimens ions are s hown in millimet ers [inches ]. 4. outline conforms to jedec outline to-257aa. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 10/2011 pin assignments 1 = drain 2 = source 3 = gate downloaded from: http:///

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